? 2001 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c (mosfet chip capability) 90 a i d104 t c = 104 c (external lead capability) 75 a i dm t c = 25 c, pulse width limited by t jm 360 a i ar t c = 25 c90a e ar t c = 25 c64mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 300 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 33 m ? note 1 single mosfet die features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls advantages plus 247 tm package for clip or spring mounting space savings high power density hiperfet tm power mosfets 98537a (12/01) plus 247 tm g d (tab) g = gate d = drain s = source tab = drain ixfx 90n30 v dss = 300 v ixfk 90n30 i d25 =90a r ds(on) = 33 m ? ? ? ? ? t rr 250 ns s g d (tab) to-264 aa (ixfk)
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 90n30 ixfx 90n30 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 40 70 s c iss 10000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1800 pf c rss 700 pf t d(on) 42 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 55 ns t d(off) r g = 1 ? (external), 100 ns t f 40 ns q g(on) 360 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 nc q gd 180 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 90 a i sm repetitive; 360 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 10 a i f = 50a,-di/dt = 100 a/ s, v r = 100 v dim. millimeter i nches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2001 ixys all rights reserved v gs - volts 3.03.54.04.55.05.56.06.5 i d - amperes 0 20 40 60 80 100 120 140 160 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 20 40 60 80 100 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.4 1.8 2.2 2.6 3.0 i d = 45a i d - amperes 0 40 80 120 160 200 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ds - volts 012345678 i d - amperes 0 40 80 120 160 200 v gs = 10v t j = 125 o c t j = 25 o c 4v 4v 5v t j = 25 o c t j = 125 o c v gs = 9v 8v t j = 125 o c 5v v gs = 9v 8v v gs = 10v i d = 90a 6v 7v 6v 7v t j = 150 o c t j = 25 o c v ds - volts 0 2 4 6 8 10 12 i d - amperes 0 25 50 75 100 125 150 ixfk 90n30 ixfx 90n30 fig.2 output characteristics @ t j = 125c fig.4 temperature dependence of drain to source resistance fig.6 drain current vs gate source voltage fig.1 output characteristics @ t j = 25c fig.3 r ds(on) vs. drain current fig.5 drain current vs. case temperature
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 90n30 ixfx 90n30 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 40 80 120 160 200 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - nf 1 10 gate charge - nc 0 50 100 150 200 250 300 v gs - volts 0 2 4 6 8 10 crss coss v ds = 150 v i d = 45 a i g = 10 ma f = 100khz t j = 125 o c t j = 25 o c ciss 5 20 0.5 fig.7 gate charge characteristic curve fig.8 capacitance curves fig.9 drain current vs drain to source voltage fig.10 transient thermal impedance
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